Fig. 4
From: Slip-free multiplication and complexity of dislocation networks in FCC metals
DDD simulation values of a\(\dot {\gamma }_{i}\), b ρi, c Ni at \(\dot {\gamma }_{d}=0.5\%\) as a function of Si and \(S_{i^{\max }}\). For clarity, data points are also projected onto the bottom plane. Inset figures show the same data plotted as a function of \(S_{i}-0.5\,S_{i^{\max }}\), which is equivalent to viewing the data along the boundary line between red and blue data points